Electronic component unit

ABSTRACT

An object of the present invention is to provide an electronic part device which can be repaired even in the case of an electronic part device having a malfunction in electrical connection after carrying out underfill. 
     The present invention is an electronic part device in which a semiconductor element (flip chip) ( 3 ) is mounted on a wiring circuit substrate ( 1 ) under such a state that an electrode part for connection (joint ball) disposed on the semiconductor element (flip chip) ( 3 ) and a circuit electrode ( 5 ) disposed on the wiring circuit substrate ( 1 ) are facing with each other. In addition, the gap between the wiring circuit substrate ( 1 ) and the semiconductor element (flip chip) ( 3 ) is filled by a filling resin layer ( 4 ) comprising a liquid epoxy resin composition which comprises the following component (D) and the following components (A) to (C).
     (A) A liquid epoxy resin.   (B) A curing agent.   (C) An N,N,N′,N′-tetra-substituted fluorine-containing aromatic diamine compound.   (D) A carboxylic acid vinyl ether addition product.

TECHNICAL FIELD

This invention relates to an electronic part device having a flip chipconnection in which facing electrodes of a semiconductor element and acircuit substrate are electrically connected via an electrode part forconnection (bump), as an electronic part device which has excellentconnection reliability and also has a repairability.

BACKGROUND OF THE INVENTION

In recent years, a direct chip attach system using a bare chip such as asemiconductor element flip chip or the like is drawing attention. Aso-called “C4 technique” is famous as the connection method for thisflip chip system, in which a high melting point solder bump is formed onthe chip side, and intermetallic bonding with solder on the ceramicscircuit substrate-side is carried out.

However, when a resin-based substrate such as a printed circuitsubstrate made of glass and an epoxy resin is used instead of theceramics circuit substrate, it poses a problem such as insufficientconnection reliability due to breaking of the solder bump bonding partcaused by a difference in coefficient of thermal expansion between thechip and the resin-based substrate. As a countermeasure for such aproblem, it is general to carry out a so-called underfill which is atechnique in which the reliability is improved through the dispersion ofthermal stress by filling the gap between the semiconductor element andthe resin-based circuit substrate using, for example, a liquid resincomposition.

DISCLOSURE OF THE INVENTION

However, since a thermosetting resin composition comprising an epoxyresin or the like as the main component is generally used as the liquidresin composition to be used in the aforementioned underfill, there is aproblem in that repair cannot easily be carried out from the viewpointthat, once it is cured by heating, the product does not melt, shows highadhesive strength, does not decompose, or becomes insoluble in solvents.Thus, once underfill is carried out, it causes a problem in that, forexample, an electronic part device having a malfunction in electricalconnection must be scrapped and discarded. Under the recent year'sdemand for recycling ability towards global atmospheric conservation, itis necessary to avoid production of waste to the utmost, so that it isexpected that repairing is possible even after underfilling.

On the other hand, in the filling method of a liquid material by theflip chip method which uses conventional solder bump, a method isemployed in which a flip chip is firstly mounted on a wiring circuitsubstrate to form metallic bonding by a solder melting step, and then aliquid resin material is injected into the gap between the semiconductorelement and wiring circuit substrate by a capillary effect. However, theaforementioned semiconductor production method has a problem in that itsproductivity is low because many production processes are required.

The present invention has been made by taking such circumstances intoconsideration, and its object is to provide an electronic part devicewhich can be repaired even in the case of an electronic part devicehaving a malfunction in electrical connection after carrying outunderfill.

In addition, another object of the present invention is to provide asemiconductor device which uses an epoxy resin composition, hasexcellent productivity and renders possible mounting of flip chip bypreviously applying a thermosetting resin composition having a functionto remove a metal oxide film or antioxidant film existing on the surfaceof a semiconductor element or wiring circuit substrate electrode, inproducing a semiconductor device which requires metal bond formation ofsolder bump or the like.

In order to attain the aforementioned objects, the electronic partdevice of the present invention is an electronic part device comprisinga semiconductor circuit substrate, a semiconductor element mountedthereon in such a way that an electrode part for connection disposed onthe semiconductor element and an electrode part for connection disposedon the circuit substrate are facing with each other, and a filling resinlayer which fills the gap between the circuit substrate andsemiconductor element, wherein the filling resin layer comprises aliquid epoxy resin composition which comprises the following component(D) and the following components (A) to (C):

(A) a liquid epoxy resin,

(B) a curing agent,

(C) an N,N,N′,N′-tetra-substituted fluorine-containing aromatic diaminecompound, and

(D) a carboxylic acid vinyl ether addition product.

That is, with the aim of achieving the aforementioned objects, thepresent inventors have conducted studies on the epoxy resin compositionas an underfill material for filling the gap between circuit substrateand semiconductor element. As a result, it was found that when (D) acarboxylic acid vinyl ether addition product is used in a liquid epoxyresin composition which uses (A) a liquid epoxy resin, (B) a curingagent and (C) an N,N,N′,N′-tetra-substituted fluorine-containingaromatic diamine compound as the main components, the aforementionedfilling of the gap between wiring circuit substrate and semiconductorelement and metallic bonding are formed by carrying out solder meltingfor mounting the semiconductor element on the wiring circuit substratevia the aforementioned thermosetting resin having a function to removeantioxidant film, so that the steps for the filling of theaforementioned wiring circuit substrate and semiconductor element andfor the metallic connection become simple, and remarkable shortening ofthe production process period can be achieved, in comparison with theconventional complex process in which a semiconductor element and awiring circuit substrate electrode are connected through metallicbonding using a flux and then a filling resin is injected into theaforementioned gap.

Moreover, it was found that after curing of the liquid epoxy resincomposition, solvation and subsequent swelling are generated in thecured product of this epoxy resin composition by the specific solventand, as a result, reduction of film strength and reduction of adhesivestrength of the cured product as a filling resin occur, so thatmechanical peeling of the cured product is possible and repairing of thesemiconductor element (flip chip) becomes possible, thus accomplishingthe present invention. Since the aforementioned fluorine-containingaromatic diamine reduces solubility parameter (SP) value of the curedproduct by a trifluoromethyl substituent or a fluorine substituent,salvation and subsequent swelling are apt to occur by a specificsolvent. According to the present invention, it was found that thesolvation and swelling property are further improved by the use of anN,N,N′,N′-tetra-substituted fluorine-containing aromatic diaminecompound and the aforementioned repairing becomes possible.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view showing the electronic part device of thepresent invention.

FIG. 2 is a sectional view showing production process of theaforementioned electronic part device.

FIG. 3 is a sectional view showing production process of theaforementioned electronic part device.

In this connection, the reference numerals in the drawings are asfollows.

-   1: Wiring circuit substrate,-   2: electrode part for connection (joint ball),-   3: semiconductor element,-   4: filling resin layer,-   5: circuit electrode, and-   10: liquid epoxy resin composition.

BEST MODE FOR CARRYING OUT THE INVENTION

Next, embodiments of the present invention are described in detail.

As shown in FIG. 1, a semiconductor element (flip chip) 3 is mounted ona wiring circuit substrate 1 in such a way that an electrode part forconnection (joint ball) 2 disposed on the semiconductor element (flipchip) 3 and a circuit electrode 5 disposed on the wiring circuitsubstrate 1 are faced with each other. In addition, the gap between theaforementioned wiring circuit substrate 1 and semiconductor element(flip chip) 3 is filled with a filling resin layer 4 comprising a liquidepoxy resin composition.

In this connection, the aforementioned two or more of the electrodeparts for the connection 2 which electrically connect the aforementionedwiring circuit substrate 1 and semiconductor element 3 may be disposedon the surface of the wiring circuit substrate 1 or disposed on thesurface of the semiconductor element 3, in advance. Alternatively, theymay be arranged on both of the surface of the wiring circuit substrate 1and of the surface of the semiconductor element 3, in advance.

The material of the aforementioned two or more of the electrode partsfor the connection 2 is not particularly limited, and examples thereofinclude low melting point and high melting point bumps by solder, tinbump, silver-tin bump, silver-tin-copper bump and the like, or goldlump, copper bump and the like when the circuit electrode 5 as anelectrode part on the wiring circuit substrate 1 comprises theaforementioned material.

Also, the material of the aforementioned wiring circuit substrate 1 isnot particularly limited, but is roughly divided into ceramic substratesand plastic substrates. As the aforementioned plastic substrates, forexample, an epoxy substrate, a bismaleimidotriazine substrate, apolyimide substrate and the like may be cited. In addition, the liquidepoxy resin composition to be used in the present invention may besuitably used without particular limitation, even in a case in which thebonding temperature cannot be set to a high temperature due to a problemof heat resistance, such as a combination of a plastic substrate with anelectrode part for connection by low melting solder.

In the aforementioned electronic part device, the electrode part forconnection 2 disposed on the semiconductor element is formed into a bumpshape, but not particularly limited to this shape, and the circuitelectrode 5 disposed on the wiring circuit substrate 1 may be providedin a bump shape.

The liquid epoxy resin composition as the aforementioned filling resinlayer 4-forming material is obtainable by formulating a carboxylic acidvinyl ether addition product (component D) together with a liquid epoxyresin (component A), a curing agent (component B) and anN,N,N′,N′-tetra-substituted fluorine-containing aromatic diaminecompound (component C). In this connection, regarding the liquid epoxyresin composition of the present invention, the liquid means a liquidstate which shows fluidity at 25° C. That is, a state in which theviscosity is within the range of from 0.01 mPa·s to 10,000 Pa·s at 25°C. Measurement of the aforementioned viscosity may be carried out usingan EMD-type rotational viscometer.

The aforementioned liquid epoxy resin (component A) is not particularlylimited with the proviso that it is a liquid epoxy resin which containstwo or more epoxy groups per 1 molecule. Examples thereof includebisphenol A type, bisphenol F type, hydrogenated bisphenol A type,bisphenol AF type, phenol novolak type and the like various liquid epoxyresins and derivatives thereof, a liquid epoxy resin derived from apolyhydric alcohol and epichlorohydrin and derivatives thereof,glycidylamine type, hydantoin type, aminophenol type, aniline type,toluidine type and the like various glycidyl type liquid epoxy resinsand derivatives thereof (described in “Jitsuyo Plastic Jiten Zairyo Hen(Practical Plastics Dictionary, Materials)”, edited by Jitsuyo PlasticJiten Editorial Committee, First Edition, Third Printing, published onApr. 20, 1996, page 211 to page 225; the contents thereof beingincorporated herein by reference), and liquid mixtures of theseaforementioned liquid epoxy resins with various glycidyl type solidepoxy resins, and the like. These may be used alone or as a mixture oftwo or more.

The aforementioned curing agent (component B) is not particularlylimited with the proviso that it can cure the aforementioned liquidepoxy resin (component A), but it is desirable to use at least one of anaromatic diamine and a derivative thereof. It is more desirable to useat least one of a fluorine-containing aromatic diamine and a derivativethereof from the viewpoint that solvation and subsequent swelling by aspecific solvent become easy.

Examples of the aromatic diamine in the aforementioned at least one ofan aromatic diamine and a derivative thereof include p-phenylenediamine,m-phenylenediamine, 2,5-toluenediamine, 2,4-toluenediamine,4,6-dimethyl-m-phenylenediamine, 2,4-diaminomesitylene and the likearomatic mononuclear diamines, 4,4′-diaminodiphenyl ether,3,3′-diaminodiphenyl ether, 3,4′-diaminodiphenyl ether,4,4′,-diaminodiphenylmethane, 3,3′-diaminodiphenylmethane,4,4′,-diaminodiphenylsulfone, 3,3′-diaminodiphenylsulfone,4,4′-diaminodiphenyl sulfide, 3,3′-diaminodiphenyl sulfide,4,4′-diaminobenzophenone, 3,3′-diaminobenzophenone and the like aromaticdinuclear diamines, 1,4-bis(4-aminophenoxy)benzene,1,4-bis(3-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)benzene,1,3-bis(3-aminophenoxy)benzene and the like aromatic trinucleardiamines, 4,4′-di-(4-aminophenoxy)diphenylsulfone,4,4′-di-(3-aminophenoxy)diphenylsulfone,4,4′-di-(4-aminophenoxy)diphenylpropane,4,4′-di-(3-aminophenoxy)diphenylpropane,4,4′-di-(4-aminophenoxy)diphenyl ether, 4,4′-di-(3-aminophenoxy)diphenylether and the like aromatic tetranuclear diamines and the like, whichmay be used alone or as a mixture of two or more.

The fluorine-containing aromatic diamine in the aforementioned at leastone of a fluorine-containing aromatic diamine and a derivative thereofis not particularly limited, with the proviso that it is a fluorinesubstituted aromatic diamine having a primary amino group, and itsexamples include 2,2′-di(trifluoromethyl)-4,4′-diaminobiphenyl,2,2-bis(4-aminophenyl)hexafluoropropane,2,2-bis(3-amino-4-methylphenyl)hexafluoropropane,2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane,2,2-bis[4-(4-aminophenoxy)phenyl]hexafluoropropane,2,2-bis(3-amino-4,5-dimethylphenyl)hexafluoropropane,2,2-bis(4-hydroxy-3-aminophenyl)hexafluoropropane,4,4′-bis[2-(4-carboxyphenyl)hexafluoroisopropyl]diphenyl ether,4,4′-bis[2-(4-aminophenoxyphenyl)hexafluoroisopropyl]diphenyl ether andthe like, which may be used alone or as a mixture of two or more.

Regarding the aforementioned at least one of a fluorine-containingaromatic diamine and a derivative thereof, a fluorine substituted orfluorinated alkyl substituted diaminobiphenyl represented by thefollowing general formula (2) is suitably used, because its use prolongspot life at room temperature.

(In the formula (2), X is fluorine and/or C_(n)F_(2n+1) (n is a positivenumber of from 1 to 10), two m's may be the same or different from eachother and each is an integer of from 1 to 4, each of R⁵ to R⁸ ishydrogen or a monovalent organic group, and at least one of R⁵ to R⁸ ishydrogen.)

In the aforementioned formula (2), each of R⁵ to R⁸ is hydrogen or amonovalent organic group, and at least one of R⁵ to R⁹ must be hydrogen.As the aforementioned monovalent organic group, for example, saturatedalkyl group represented by —C_(n)H_(2n+1) (n is an integer of from 1 to10), aryl group, 3-alkoxy substituted-2-hydroxypropyl group representedby —CH₂CH(OH)CH₂—OC_(n)H_(2n+1), 3-aryl substituted-2-hydroxypropylgroup represented by —CH₂CH(OH)CH₂—O—R⁹ (R⁹ is an aryl group), and thelike may be cited. In addition, R⁵ to R⁸ may be the same or differentfrom one another when the aforementioned conditions are satisfied. Theaforementioned aryl group is not particularly limited, and itsillustrative examples include phenyl group (C₆H₅—), tolyl group(CH₃C₆H₅—), xylyl group ((CH₃)₂C₆H₅), biphenyl group (C₆H₅C₆H₄—),naphthyl group (C₁₀H₇—), anthryl group (C₁₄H₉—), phenanthryl group(C₁₄H₉—) and the like.

Particularly, according to the present invention, the use of2,2′-di(trifluoromethyl)-4,4′-diaminobiphenyl having the smallest activehydrogen equivalent as the aforementioned fluorine-containing aromaticdiamine is desirable from the viewpoint that the blending amount can bereduced and viscosity of the one-component non-solvent epoxy resincomposition may be reduced.

Regarding the blending ratio of the liquid epoxy resin (component A)with the curing agent (component B) according to the present invention,it is desirable to set the number of active hydrogen of theaforementioned curing agent (component B) within the range of from 0.4to 1.6 based on 1 epoxy group of the aforementioned liquid epoxy resin(component A). More desirable range is the range of from 0.6 to 1.2.That is, when the number of active hydrogen exceeds 1.6 based on 1 epoxygroup, viscosity of the liquid epoxy resin composition tends toincrease, and when it is less that 0.4, glass transition temperature ofcured product of the liquid epoxy resin composition tends to decrease.

On the other hand, according to the present invention, when the liquidepoxy resin (component A), particularly a multifunctional aliphaticliquid epoxy resin is used, a possibility of generating voids caused bythe evaporation or volatilization of low boiling point compoundscontained in the multifunctional aliphatic liquid epoxy resin or thelike may be reduced, by making at least one of the aforementionedfluorine-containing aromatic diamine and a derivative thereof and themultifunctional aliphatic liquid epoxy resin into a prepolymer throughtheir preliminary reaction.

The aforementioned prepolymer may be obtained, for example, by allowingat least one of a fluorine-containing aromatic diamine and a derivativethereof to react with a multifunctional aliphatic liquid epoxy compoundhaving two or more epoxy groups in one molecule. In general, theprepolymer is prepared by putting predetermined amounts of respectivecomponents into a reaction vessel, and carrying out the reaction at atemperature of from 60 to 120° C. in a stream of nitrogen and under theabsence of catalyst until a predetermined molecular weight is obtained.Regarding the molecular weight of this prepolymer, it is desirable touse a prepolymer prepared by reacting until its polystyrene based weightaverage molecular weight becomes approximately from 400 to 5,000, and bypreparing such a prepolymer, generation of voids in the underfillfilling resin layer caused by the evaporation or volatilization ofvolatile low boiling point low molecular weight compounds can beprevented.

Illustrative examples of the aforementioned multifunctional aliphaticliquid epoxy resin include ethylene glycol diglycidyl ether, propyleneglycol diglycidyl ether, butanediol diglycidyl ether, neopentyl glycoldiglycidyl ether, diglycidylaniline, trimethylolpropane diglycidylether, trimethylolpropane triglycidyl ether, glycerol diglycidyl ether,glycerol triglycidyl ether and the like aliphatic diols and triols, ormultifunctional glycidyl ethers of aliphatic multifunctional alcoholsand the like.

The N,N,N′,N′-tetra-substituted fluorine-containing aromatic diaminecompound (component C) to be used together with the aforementionedliquid epoxy resin (component A) and curing agent (component B) isillustratively a compound represented by the following general formula(1), which may be obtained, for example, by allowing the aforementionedfluorine-containing aromatic diamine to react with a mono-epoxy compoundcontaining 1 epoxy group in 1 molecule.

(In the formula (1), X is fluorine and/or C_(n)F_(2n+1) (n is a positivenumber of from 1 to 10), two m's may be the same or different from eachother and each is an integer of from 1 to 4, R¹ to R⁴ are monovalentorganic groups other than hydrogen, which may be the same or differentfrom one another.)

In the aforementioned formula (1), R¹ to R⁴ are monovalent organicgroups other than hydrogen, and their examples include saturated alkylgroup represented by —C_(n)H_(2n+1) (n is an integer of from 1 to 10),aryl group, 3-alkoxy substituted-2-hydroxypropyl group represented by—CH₂CH(OH)CH₂—OC_(n)H_(2n+1), 3-aryl substituted-2-hydroxypropyl grouprepresented by —CH₂CH(OH)CH₂—O—R⁹ (R⁹ is an aryl group), and the like.In addition, R¹ to R⁴ may be the same or different from one another. Theaforementioned aryl group is not particularly limited, and itsillustrative examples include phenyl group (C₆H₅—), tolyl group(CH₃C₆H₅—), xylyl group ((CH₃)₂C₆H₅), biphenyl group (C₆H₅C₆H₄—),naphthyl group (C₁₀H₇—), anthryl group (C₁₄H₉—), phenanthryl group(C₁₄H₉—) and the like.

Regarding the aforementioned reaction of a fluorine-containing aromaticdiamine with a mono-epoxy compound containing 1 epoxy group in 1molecule, the reaction may be carried out by putting predeterminedamounts of respective components into a reaction vessel, and heatingthem at a temperature of approximately from 60 to 120° C. in a stream ofnitrogen and under the absence of catalyst until epoxy group isconsumed, and the tetra-substitution compound represented by theaforementioned general formula (1) is obtained by this reaction.

The aforementioned mono-epoxy compound is not particularly limited withthe proviso that it is an epoxy compound containing 1 epoxy group in 1molecule, and its examples include n-butyl glycidyl ether, allylglycidyl ether, 2-ethylhexyl glycidyl ether, styrene oxide, phenylglycidyl ether, cresyl glycidyl ether, lauryl glycidyl ether,p-sec-butylphenyl glycidyl ether, nonylphenyl glycidyl ether, glycidylether of carbinol, glycidyl methacrylate, vinylcyclohexene monoepoxide,α-pinene oxide and the like. These may be used alone or as a mixture oftwo or more.

It is desirable to set blending ratio of the aforementionedN,N,N′,N′-tetra-substituted fluorine-containing aromatic diaminecompound (component C) within a range of from 10 to 70% by weight basedon the entire organic components of the liquid epoxy resin composition.It is set to more preferably from 30 to 60% by weight, particularlypreferably from 20 to 40% by weight. That is, this is because repair byquick swelling can hardly be taken place when it is less than 10% byweight, and on the other hand, when it exceeds 70% by weight, strengthof cured product of the liquid epoxy resin composition tend to becomeinsufficient, thus showing a tendency in that a mechanical strengthwhich can endure the temperature cycle may not be maintained.

According to the present invention, various conventionally known curingaccelerators may be used for shortening the curing time. Illustrativeexamples thereof include 1,8-diazabicyclo(5,4,0)undecane-7, triethylenediamine and the like tertiary amines, 2-methylimidazole and the likeimidazoles, triphenylphosphine, tetraphenylphosphonium tetraphenylborateand the like phosphorus-based curing accelerators, salicylic acid andthe like acid catalysts, acetylacetonatocupper, acetylacetonatozinc andthe like Lewis acids, and the like. These may be used alone or as amixture of two or more.

Particularly, according to the present invention, it is desirable to usetetraphenylphosphonium tetraphenylborate and the like phosphonium saltsor acetylacetonatocupper, acetylacetonatozinc and the like Lewis acidsas the aforementioned curing accelerators, because they do not spoilstability of the liquid epoxy resin composition.

The blending amount of the aforementioned curing accelerator is notparticularly limited, but it is desirable to appropriately set it tosuch a ratio that the desired curing rate may be obtained based on themixture of the aforementioned liquid epoxy resin (component A), curingagent (component B) and N,N,N′,N′-tetra-substituted fluorine-containingaromatic diamine compound (component C). For example, the amount for usemay be easily decided by measuring gelation time using a heating plate,as an index of the curing rate. As an example thereof, it is desirableto set it within a range of from 0.01 to 3% by weight, based on theentire liquid epoxy resin composition.

As the carboxylic acid vinyl ether addition product (component D) as aflux component to be used together with the aforementioned liquid epoxyresin (component A), curing agent (component B) andN,N,N′,N′-tetra-substituted fluorine-containing aromatic diaminecompound (component C), the carboxylic acid monovinyl ether additionproduct represented by the following general formula (3), compoundsconsisting of organic carboxylic acids and vinyl ether compounds such asthe polyvalent carboxylic acid polyvalent vinyl ether addition productrepresented by the following general formula (4) may be used, though notparticularly limited thereto with the proviso that they have thesestructures. For example, as the aforementioned organic carboxylic acid,formic acid, acetic acid, propionic acid, butyric acid, valeric acid,caproic acid, caprylic acid, lauric acid, myristic acid, palmitic acid,stearic acid, oleic acid, linoleic acid, linolenic acid,cyclohexanecarboxylic acid, phenylacetic acid, benzoic acid, o, m,p-toluic acid, o, m, p-chlorobenzoic acid, o m, p-bromobenzoic acid, o,m, p-nitrobenzoic acid and the like monocarboxylic acids, oxalic acid,malonic acid, succinic acid, glutaric acid, adipic acid, maleic acid,fumaric acid, phthalic acid, isophthalic acid, terephthalic acid,itaconic acid, acrylic acid and the like dicarboxylic acids, trimelliticacid, pyromellitic acid, isocyanuric acid, carboxyl group-containingpolybutadiene and the like polycarboxylic acids and the like. Inaddition, as the aforementioned vinyl ether compound, vinyl ethercompounds having butyl group, ethyl group, propyl group, isopropylgroup, cyclohexyl group, allyl group and the like organic groups ofmonovalent or more may be exemplified. By the use of a compound of sucha structure, the component D as a flux activator can exert flux effectin the semiconductor mounting process and then react with the epoxyresin composition, so that it may be suitably used as a material havingboth functions as the flux component and the curing agent.R¹⁰—[CO—O—CH(CH₃)—O—R¹¹]_(n)  (3)(In the formula (3), R¹⁰ is an organic group of monovalent or more, R¹¹is an organic group of monovalent or more, and they may be the same ordifferent from each other. Also, n is a positive integer, preferably apositive integer of from 1 to 4.)-[O—CO—R¹²—CO—O—CH(CH₃)—O—R¹³—O—CH(CH₃)]_(n)-  (4)(In the formula (4), R¹² and R¹³ are divalent organic groups, and theymay be the same or different from each other. Also, n is a positiveinteger, preferably a positive integer of from 1 to 4.)

Particularly preferably, an adipic acid cyclohexyl divinyl etheraddition product which is obtained using adipic acid as the organiccarboxylic acid and a vinyl ether compound having cyclohexyl group asthe vinyl ether compound, maleic acid cyclohexyl divinyl ether additionproduct or the like may be exemplified, from the viewpoint that it formsa three dimensional cross-linking structure with epoxy resin.

From the viewpoint of solder persistency, heat resistance and excessmoisture tolerance reliability, it is desirable to set the containingratio of the aforementioned carboxylic acid vinyl ether addition product(component D) as the flux component within a range of from 0.1 to 20% byweight, more preferably from 0.5 to 15% by weight, particularlypreferably from 1.0 to 10% by weight, based on the entire organiccomponents. That is, this is because the flux activity tends to becomeinsufficient when it is less that 0.1% by weight, and glass transitiontemperature of the cured product tends to reduce when it exceeds 20% byweight.

In addition, 0.5% by weight or more is desirable because a tendency ofrapidly becoming insufficient in flux activity is not found, and 15% byweight or less is desirable because a tendency of slightly reducingglass transition temperature of the cured product is not found.

According to the present invention, an inorganic filler can also beadded within such a range that malfunction does not occur in themetallic bonding of the bump electrode part of semiconductor elementflip chip with the electrode part of wiring circuit substrate. As suchan inorganic filler, silica powder of synthetic silica, fused silica orthe like, and various powders such as of alumina, silicon nitride,aluminum nitride, boron nitride, magnesia, calcium silicate, magnesiumhydroxide, aluminum hydroxide, titanium oxide and the like may beexemplified. Among the aforementioned inorganic fillers, it is desirableto use spherical silica powder because of its large effect to reduceviscosity of the liquid epoxy resin composition. Also, as theaforementioned inorganic filler, it is desirable to use a powder havinga maximum particle diameter of 24 μm or less. In addition, a fillerhaving the aforementioned maximum particle diameter and also having anaverage particle diameter of 10 μm or less is preferably used, and afiller having an average particle diameter of from 1 to 8 μm is suitablyused. In this connection, the aforementioned maximum particle diameterand average particle diameter may be measured, for example, using alaser diffraction scattering type particle size distribution analyzer.

It is desirable to set the blending amount of the aforementionedinorganic filler within a range of from 10 to 80% by weight based on theentire liquid epoxy resin composition, and it is particularly preferablyfrom 40 to 70% by weight. This is because there is a tendency that theeffect of the cured product of liquid epoxy resin composition to reducecoefficient of linear expansion becomes small when the blending amountis less than 10% by weight, and there is a tendency that viscosity ofthe liquid epoxy resin composition increases when it exceeds 80% byweight.

In this connection, in addition to the aforementioned liquid epoxy resin(component A), curing agent (component B), N,N,N′,N′-tetra-substitutedfluorine-containing aromatic diamine compound (component C), carboxylicacid vinyl ether addition product (component D), curing accelerator andinorganic filler, the liquid epoxy resin composition of the presentinvention may jointly use a silane coupling agent for the purpose ofsuperior bonding with an adherend, enhancing interface bonding withvarious inorganic fillers, and the like. The aforementioned silanecoupling agent is not particularly limited, and its examples includeβ-(3,4-epoxycyclohexyl)ethyl trimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropyl methyldiethoxysilane and the like.

Also, in addition to the aforementioned respective components, areactive diluent can also be formulated optionally for the purpose ofeffecting viscosity reduction and the like. Since this reactive diluentsometimes contains volatile low boiling point compounds, it is desirableto use it by removing in advance volatile evaporating low boiling pointcompounds which cause generation of voids in the filling resin layer ata predetermined curing temperature of the liquid epoxy resin compositionas the underfill resin, as described in the foregoing. In addition, whenthe reactive diluent itself is volatile, voids are apt to be generatedin the filling resin layer at a predetermined curing temperature of theliquid epoxy resin composition as the underfill resin, so that it isdesirable to limit use of such a reactive diluent.

Examples of the aforementioned reactive diluent include n-butyl glycidylether, allyl glycidyl ether, 2-ethylhexyl glycidyl ether, styrene oxide,phenyl glycidyl ether, cresyl glycidyl ether, lauryl glycidyl ether,p-sec-butylphenyl glycidyl ether, nonylphenyl glycidyl ether, glycidylether of carbinol, glycidyl methacrylate, vinylcyclohexene monoepoxide,α-pinene oxide, glycidyl ether of a tertiary carboxylic acid, diglycidylether, glycidyl ether of (poly)ethylene glycol, glycidyl ether of(poly)propylene glycol, glycidyl ether of poly(propylene glycol),propylene oxide addition product of bisphenol A, partial additionproduct of a bisphenol A type epoxy resin with a polymerized fatty acid,polyglycidyl ether of a polymerized fatty acid, diglycidyl ether ofbutanediol, vinylcyclohexene dioxide, neopentyl glycol diglycidyl ether,diglycidylaniline, trimethylolpropane diglycidyl ether,trimethylolpropane triglycidyl ether, glycerol diglycidyl ether,glycerol triglycidyl ether and the like. These may be used alone or as amixture of two or more.

Also, in addition to the aforementioned respective components, antimonytrioxide, antimony pentoxide, brominated epoxy resin or the like flameretardant or flame retardant co-agent, silicone or the like low tressproviding agent, a coloring agent and the like may be optionallyformulated in the liquid epoxy resin composition of the presentinvention, within such a range that the gist of the present invention isnot spoiled.

The liquid epoxy resin composition according to the present inventionmay be produced, for example, in the following manner. That is, aone-component non-solvent liquid epoxy resin composition may be producedby blending predetermined amounts of the aforementioned liquid epoxyresin (component A), curing agent (component B), inorganic filler(component C), N,N,N′,N′-tetra-substituted fluorine-containing aromaticdiamine compound (component D) and, as occasion demands, curingaccelerator and the like, mixing and dispersing them under a highshearing force of three rollers, homo-mixer or the like, and as occasiondemands, effecting degassing under a reduced pressure.

In the electronic part device of the present invention, a semiconductorelement is mounted on a wiring circuit substrate via two or moreelectrode parts for connection, and the gap between the aforementionedwiring circuit substrate and semiconductor element is filled with afilling resin layer prepared using the aforementioned liquid epoxy resincomposition. The aforementioned filling resin layer may be formed byputting the aforementioned liquid epoxy resin composition between theaforementioned wiring circuit substrate and semiconductor element, andthen curing the composition. An example of the embodiment of theproduction method of such an electronic part device of the presentinvention is described in regular order based on the drawings.

That is, filling of the gas between the semiconductor element (flipchip) and wiring circuit substrate which uses the liquid epoxy resincomposition of the present invention is carried out, for example, in thefollowing manner. Firstly, as shown in FIG. 2, the liquid epoxy resincomposition 10 of the present invention is put on the wiring circuitsubstrate 1 equipped with the circuit electrode 5. Next, as shown inFIG. 3, the semiconductor element 3 equipped with two or more of thespherical electrode part for connection (joint ball) 2 is put on apredetermined position of the liquid epoxy resin composition 10 of thepresent invention, the aforementioned liquid epoxy resin composition 10is melted on a heating stage to reduce its viscosity, the liquid epoxyresin composition 10 wherein the aforementioned electrode part forconnection of the semiconductor element 3 became the aforementionedstate is pushed away, and the aforementioned liquid epoxy resincomposition 10 under the aforementioned low viscosity condition isfilled into the gap between the aforementioned semiconductor element 3and the aforementioned wiring circuit substrate 1, where the circuitelectrode 5 on the wiring circuit substrate 1 and the electrode part forconnection 2 are contacted with each other. Thereafter, metallic bondingby solder reflow is carried out, and then the filling resin layer 4 isformed by filling the aforementioned gap through curing of the liquidepoxy resin composition 10. In this case, the solder reflow method maybe either a bonding method which uses a reflow furnace or a bondingmethod in which solder melting is carried out by heating the heater partto the solder melting point or more, simultaneously with the chipmounting. In this way, as shown in FIG. 1, the electronic part device inwhich the semiconductor element 3 is mounted on the wiring circuitsubstrate 1, and the gap between the aforementioned wiring circuitsubstrate 1 and semiconductor element 3 is filled with the filling resinlayer 4 comprising the liquid epoxy resin composition 10, under such acondition that the electrode part for connection (joint ball) 2 disposedon the semiconductor element (flip chip) 3 and the circuit electrode 5disposed on the wiring circuit substrate 1 are facing with each other,is produced.

In addition, thickness and weight of the aforementioned liquid epoxyresin composition 10 are optionally set in the same manner as describedin the foregoing, based on the size of the semiconductor element 3 to bemounted and the size of the spherical electrode part for connection 2disposed on the semiconductor element 3, that is, based on the occupyingvolume of the filling resin layer 4 formed by filling and filling thegap between the semiconductor element 3 and wiring circuit substrate 1.

Also, as the heating temperature in changing the aforementioned liquidepoxy resin composition 10 to a low viscosity state by heating the samein the aforementioned production, it may be appropriately set by takinginto consideration heat resistance of the semiconductor element 3 andwiring circuit substrate 1, melting point of the electrode part forconnection 2 and room temperature viscosity, heat resistance and thelike of the liquid epoxy resin composition.

The gap distance between the semiconductor element (flip chip) 3 and thewiring circuit substrate 1 of the electrical part device thus obtainedis generally from about 30 to 300 μm.

Cured product of the epoxy resin composition in the filling part of theelectronic part device obtained in this manner swells by a specificorganic solvent and its adhesive strength therefore is reduced evenafter the curing, so that the electronic part device can be repaired.

As the aforementioned specified organic solvent, a ketone solvent, aglycol diether solvent, a nitrogenous solvent and the like aredesirable. These may be used alone or as a mixture of two or more.

Examples of the aforementioned ketone solvent include acetophenone,isophorone, ethyl-n-butyl ketone, diisopropyl ketone, diethyl ketone,cyclohexyl ketone, di-n-propyl ketone, methyl oxide, methyl-n-amylketone, methyl isobutyl ketone, methyl ethyl ketone,methylcyclohexanone, methyl-n-heptyl ketone, phorone and the like. Thesemay be used alone or as a mixture of two or more.

Examples of the aforementioned glycol diether solvent include ethyleneglycol diethyl ether, ethylene glycol dibutyl ether, ethylene glycoldimethyl ether, diethylene glycol ethyl methyl ether, diethylene glycoldiethyl ether, diethylene glycol dibutyl ether, diethylene glycoldimethyl ether, triethylene glycol dimethyl ether and the like. Thesemay be used alone or as a mixture of two or more.

Examples of the aforementioned nitrogenous solvent includesN,N′-dimethylformamide, N,N′-dimethylacetamide, N-methyl-2-pyrrolidone,N,N′-dimethyl sulfoxide, hexamethylphosphor triamide and the like. Thesemay be used alone or as a mixture of two or more.

As a repairing method for the aforementioned electronic part device, forexample, the semiconductor element is removed by heating the repairingpart of the semiconductor element (flip chip) or wiring circuitsubstrate using a heating plate. As the heating temperature of thiscase, when heated at a temperature of about +50° C. or more higher thanthe glass transition temperature of a cured product of the epoxy resincomposition of the present invention, both (semiconductor element orwiring circuit substrate) can be easily peeled off under such a statethat the cured product is under a cohesive failure or adhered to oneside. Thereafter, when the aforementioned organic solvent is directlyapplied thereto or absorbent cotton impregnated with the aforementionedorganic solvent is allowed to contact with the residual part of thecured product of the epoxy resin composition of the wiring circuitsubstrate at room temperature, and then the residue is removed afterconfirming swelling of the hardened product, the wiring circuitsubstrate can be reused. On the other hand, the semiconductor element(flip chip) to which the residue of cured product of the liquid epoxyresin composition is adhered, the semiconductor element (flip chip) canbe reused by soaking it in the aforementioned organic solvent in apredetermined container and removing the thus swelled cured product.

Alternatively, though it requires a treatment for a prolonged period oftime, the semiconductor element can also be detached from the wiringcircuit substrate by directly applying the aforementioned organicsolvent to the entire repairing part of the aforementioned wiringcircuit substrate or covering the same with absorbent cotton impregnatedwith the organic solvent, and thereby reducing strength and adhesivestrength of the cured product through its swelling by graduallypermeating the organic solvent from the end of the semiconductorelement.

EXAMPLES

Next, Examples are described together with comparative examples.

Firstly, respective components shown below were prepared.

Liquid Epoxy Resin a:

An epoxy resin represented by the following structural formula (5)

(In the formula (5), n is a positive number of 0 or more (preferably apositive number of from 0 to 300, more preferably a positive number offrom 0 to 10). Purity 99%, viscosity 22 dPa·s (25° C.), epoxy equivalent165 g/eq)

Liquid Epoxy Resin b:

A multifunctional epoxy compound represented by the following structuralformula (6)

(In the formula (6), viscosity 0.6 dPa·s (25° C.), epoxy equivalent 125g/eq)

Curing Agent a:

A fluorine-containing aromatic diamine represented by the followingstructural formula (7).

(In the formula (7), melting point 182° C., active hydrogen equivalent80 g/eq)

Curing Agent b:

A fluorine-containing aromatic diamine derivative represented by thefollowing structural formula (8) obtained by putting 1 mol of2,2′-di(trifluoromethyl)-4,4′-diaminobiphenyl represented by theaforementioned structural formula (7) and 0.5 mol of butyl glycidylether in that ratio into a reaction vessel and allowing them to undergothe reaction at 200° C.

(In the formula (8), in the four of R, 3.5 in average are hydrogen, and0.5 in average is —CH₂—CH(OH)CH₂—O—C₄H₉. Also, average active hydrogenequivalent is 110 g/eq.)

N,N,N′,N′-tetra-substituted fluorine-containing aromatic diaminecompound:

An N,N,N′,N′-tetra-substituted fluorine-containing aromatic diaminecompound represented by the following structural formula (9).

(In the formula (9), R″ is —CH₂—CH(OH)CH₂—O—C₄H₉.)

Prepolymer a:

A prepolymer a (active hydrogen equivalent 325) which is a starchsyrup-like viscous liquid obtained by allowing 0.5 equivalent (82.5 g)of the multifunctional epoxy resin represented by the aforementionedstructural formula (5) to react with 1 active hydrogen equivalent (80 g)of the fluorine-containing aromatic diamine represented by theaforementioned structural formula (7) at 150° C. for 15 minutes and thencooling the product.

Prepolymer b:

A prepolymer b (viscosity 10 dPa·s, weight average molecular weight 560)obtained by charging a reaction vessel with 1 mole of thefluorine-containing aromatic diamine derivative represented by theaforementioned structural formula (8) and 4 moles of the multifunctionalepoxy resin represented by the aforementioned structural formula (6) andallowing them to undergo the reaction at 100° C. for 10 minutes.

Inorganic Filler:

Spherical silica particles (maximum particle diameter 12 μm, averageparticle diameter 4 μm, specific surface area 3.0 m²/g).

Carboxylic Acid Vinyl Ether Addition Product a:

An adipic acid cyclohexyl divinyl ether addition product containing astructural unit represented by the following structural formula (a) asthe main component (acid equivalent 273 g/mol, viscosity 26 dPa·s,weight average molecular weight 2,050, number average molecular weight1,405).-[O—CO—(CH₂)₄—CO—O—CH(CH₃)—O—C₆H₁₀—O—O—CH(CH₃)]_(n)-  (a)Carboxylic Acid Vinyl Ether Addition Product b:

A maleic acid cyclohexyl divinyl ether addition product represented bythe following structural formula (b)=acid equivalent 254 g/mol,grease-like viscous liquid, weight average molecular weight 2,300,number average molecular weight 1,300).-[O—CO—CH═CH—CO—O—CH(CH₃)—O—C₆H₁₀—O—CH(CH₃)]_(n)-  (b)

Examples 1 to 14 and Comparative Examples 1 to 3

One-component non-solvent liquid epoxy resin compositions were preparedby blending respective components prepared in the above at the ratiosshown in the following Table 1 to Table 4, and uniformly mixing anddispersing them at room temperature (25° C.) using three rollers.

TABLE 1 (part by weight) Examples 1 2 3 4 5 6 Liquid epoxy resin a 0.8250.825 0.825 0.825 0.825 0.825 b 0.625 0.625 0.625 0.625 0.625 0.625Curing agent a — — — — — — b 0.88 0.88 0.88 0.88 0.22 0.66N,N,N′,N′-tetra- 1.55 0.78 2.85 1.55 1.55 1.55 substitutedfluorine-containing aromatic diamine compound Carboxylic acid a 0.190.16 0.26 0.02 0.08 0.31 vinyl b — — — — — — ether addition productPrepolymer a — — — — — — b — — — — — — Inorganic filler — — — — — —

TABLE 2 (part by weight) Examples 7 8 9 10 11 12 Liquid epoxy resin a0.825 0.825 0.825 0.825 0.825 0.825 b 0.625 0.625 0.625 0.625 0.6250.625 Curing agent a — 0.64 — — — — b 0.88 — 0.88 0.88 0.88 0.88N,N,N′,N′-tetra- 1.55 1.39 1.55 1.55 0.78 2.85 substitutedfluorine-containing aromatic diamine compound Carboxylic acid a 0.700.17 0.19 — — — vinyl b — — — 0.19 0.16 0.26 ether addition productPrepolymer a — — — — — — b — — — — — — Inorganic filler — — 4.07 4.07 ——

TABLE 3 (part by weight) Examples 13 14 Liquid epoxy resin a 0.413 0.825b 0.625 — Curing agent a — — b — — N,N,N′,N′-tetra-substituted 1.3941.553 fluorine-containing aromatic diamine compound Carboxylic acidvinyl a 0.17  0.24  ether addition product b — — Prepolymer a 1.053 — b— 1.505 Inorganic filler — —

TABLE 4 (part by weight) Comparative Examples 1 2 3 Liquid epoxy resin a0.825 0.825 0.825 b 0.625 0.625 — Curing agent a — — — b 0.88  0.88  —N,N,N′,N′-tetra-substituted 1.55  1.55  1.553 fluorine-containingaromatic diamine compound Carboxylic acid vinyl a — — — ether additionproduct b — — — Prepolymer a — — — b — — 1.505 Inorganic filler — 2.33 —

Using each of the thus obtained liquid epoxy resin compositions ofExamples and Comparative Examples, its viscosity at 25° C. was measuredusing an EMD type rotational viscometer, and then packed in apolypropylene syringe equipped with a needle of 0.56 mm in needle innerdiameter.

Thereafter, the liquid epoxy resin composition was applied using theaforementioned syringe in advance to the solder pads (substrate-sideelectrodes)—containing semiconductor element arranging face of a wiringcircuit substrate of 1 mm in thickness made of FR-4 glass-epoxy, inwhich 64 wiring pads of 300 μm in diameter are opened (substrate-sideelectrodes). On the other hand, a silicon chip (370 μm in thickness, 10mm×10 mm in size) having 64 solder bump electrodes of 200 μm in diameterwas prepared, the aforementioned substrate-side electrodes of the wiringcircuit substrate and the bump electrodes of the face down silicon chipwere aligned, and the silicon chip was allowed to stand on the wiringcircuit substrate. This was heated to 60° C. on a heating stage and thensolder-bonded by passing through a heating reflow furnace under acondition of 240° C. for 10 seconds. The gap between the aforementionedflip chip and wiring circuit substrate was 210 μm. Thereafter, itsfilling was carried out by curing it at 150° C. for 4 hours to preparerespective electronic part devices.

After completion of the curing, they were gradually cooled down to roomtemperature and then their electrical connection was examined by circuittesting. As a result, a case in which electrical connection was obtainedwas expressed as O, and a case in which continuity was not obtained wasexpressed as X.

In addition, the presence or absence of voids in the filling resin layerwhich filled and filled the gap between the wiring circuit substrate andsemiconductor element was observed by an ultrasonic flaw detector. Acase in which voids were not observed was evaluated as O, and a case inwhich 1 or 2 voids were observed as Δ, and a case in which more voidswere observed as X.

Using the respective electronic part devices obtained in this manner,their defect percentage in connectivity and repairing ability weremeasured and evaluated in accordance with the methods shown in thefollowing. The results are shown in the following Table 5 to Table 8,together with measured physical property of the aforementioned liquidepoxy resin composition.

Defect Percentage in Connectivity:

Defect percentage in connectivity of the aforementioned electronic partdevice just after filling was measured. The aforementioned electronicpart device was subjected to a temperature cycle test of −30° C./10minutes

125° C./10 minutes using a thermal test device to examine electricalcontinuity after 1,000 cycles, and then the defect percentage inconnectivity (%) was calculated by carrying out a connection reliabilitytest on all of the 64 copper wiring pads of the aforementionedglass-epoxy wiring circuit substrate.

Repairing Ability:

After measuring the aforementioned defect percentage in connectivity,silicon chip was peeled off from the aforementioned electronic partdevice on a heating plate heated to 200° C. and the remaining part wasreturned to room temperature, and absorbent cotton impregnated with amixed solvent of N,N′-dimethylformamide and diethylene glycol dimethylether (same volume) was put on the residual part of the cured product ofepoxy resin component remaining on the connecting parts of theaforementioned remaining part and allowed to stand at room temperature(22° C.) for 1 hour. Thereafter, this absorbent cotton was removed andremoving of the cured product of epoxy resin component was carried outby thoroughly wiping with methanol. After supply of solder paste to padparts of the wiring circuit substrate and subsequent solder melting,electrical continuity of the peelable electronic part device was againexamined by mounting a silicon chip on the wiring circuit substrate inthe same manner as described in the above. Thereafter, this was filledto carry out evaluation of repair (rework) ability in the same manner asdescribed in the above.

A case in which cured product of the epoxy resin composition iscompletely removable and the electrical connection is perfect wasexpressed as ⊚, and a case in which the cured product can be peeled offthough it slightly remains, but the electrical connection is perfect asO, a case in which the cured product can be peeled off though itslightly remains, but the electrical connection is imperfect as Δ, and acase in which cured product of the epoxy resin composition can hardly bepeeled off, and the electrical connection is imperfect as X.

TABLE 5 Examples 1 2 3 4 5 6 Viscosity (at 25° C.) (dPa · s) 52 55 52 5354 48 Defect percentage in connectivity (%)  0  0  0  0  0  0 Voids ◯ ◯◯ ◯ ◯ ◯ Electrical connection test ◯ ◯ ◯ ◯ ◯ ◯ Repair ability (22° C.) ◯◯ ◯ ◯ ◯ ◯

TABLE 6 Examples 7 8 9 10 11 12 Viscosity (at 25° C.) (dPa · s) 44 120250 280 64 59 Defect percentage in connectivity  0  0  0  0  0  0 (%)Voids ◯ ◯ ◯ ◯ ◯ ◯ Electrical connection test ◯ ◯ ◯ ◯ ◯ ◯ Repair ability(22° C.) ◯ ◯ ◯ ◯ ◯ ◯

TABLE 7 Examples 13 14 Viscosity (at 25° C.) (dPa · s) 75 68 Defectpercentage in connectivity (%) 0 0 Voids ◯ ◯ Electrical connection test◯ ◯ Repair ability (22° C.) ◯ ◯

TABLE 8 Comparative Examples 1 2 3 Viscosity (at 25° C.) 51 180 71 (dPa· s) Defect percentage in 100 100 100 connectivity (%) Voids ◯ ◯ ◯Electrical connection not not not test testable testable testable Repairability (22° C.) ◯ ◯ ◯

Based on the results of the aforementioned Table 5 to Table 8, it isevident that all of the liquid epoxy resin compositions of Examples arealso superior in the repair property, because voids were not generatedin the filling resin layer, and there was no defect percentage inconnectivity due to the use of the carboxylic acid vinyl ether additionproduct as a flux component. In addition, it is apparent that they areexcellent as void-less, one-component non-solvent liquid epoxy resincompositions combined with low viscosity.

Contrary to this, the liquid epoxy resin composition of ComparativeExample 1 showed good repair ability, but its continuity itself was notobtained because of the absence of the carboxylic acid vinyl etheraddition product as a flux component. Also, in the same manner, thecontinuity itself was not obtained in the preparations of otherComparative Examples because of the absence of flux component.

While the invention has been describe in detail and with reference tospecific embodiments thereof, it will be apparent to one skilled in theart that various changes and modifications can be made therein withoutdeparting from the spirit and scope of the invention.

This application is based on a Japanese patent application filed on Dec.25, 2002 (Japanese Patent Application No. 2002-374735), the entirecontents thereof being thereby incorporated by reference.

INDUSTRIAL APPLICABILITY

As described in the above, the present invention is an electronic partdevice in which the gap between the circuit substrate and semiconductorelement is filled with a filling resin layer comprising a liquid epoxyresin composition containing a carboxylic acid vinyl ether additionproduct (component D) together with a liquid epoxy resin (component A),a curing agent (component B) and an N,N,N′,N′-tetra-substitutedfluorine-containing aromatic diamine compound (component C). Since theaforementioned carboxylic acid vinyl ether addition product (componentD) as a reflux component is blended in the aforementioned liquid epoxyresin composition, the filling can be achieved simultaneously with theelectrical connection of flip chip as the semiconductor element and thewiring circuit substrate, so that the productivity becomes excellent.What is more, it easily swells at room temperature by undergoingsalvation by a specific organic solvent even after its curing. As aresult, strength of the cured product is considerably reduced so that itis possible to easily peel it off from an adherend (electrode or thelike). Thus, the electronic part device obtained by carrying out fillingusing the aforementioned liquid epoxy resin composition has superiorproductivity and connection reliability, and it is not necessary todiscard the electronic part device itself even when a connection failureis generated due to positional slippage between electrodes or the like,so that an electronic part device having superior repair ability can beobtained.

When the aforementioned specific compound represented by the generalformula (1) is used as the aforementioned N,N,N′,N′-tetra-substitutedfluorine-containing aromatic diamine compound (component C), it exertsfavorable effect in which easiness for repairing can be resulted byquick swelling ability, which is desirable.

In addition, when the aforementioned fluorine-containing aromaticdiamine represented by the general formula (2) is used as the curingagent (component B), and a prepolymer prepared by allowing this to reactwith the liquid epoxy resin (component A) is used, further improvementof curing speed can be attained. What is more, since it can be formed inadvance into a condition of from a liquid state to a viscous pastestate, complex steps are not necessary in the measurement at the time ofblending and dispersing step thereafter, so that the liquid epoxy resincomposition can be easily obtained.

1. An electronic part device comprising a semiconductor circuitsubstrate, a semiconductor element mounted thereon in such a way that anelectrode part for connection disposed on the semiconductor element andan electrode part for connection disposed on the circuit substrate arefacing with each other, and a filling resin layer which fills a gapbetween the circuit substrate and semiconductor element, wherein thefilling resin layer comprises a liquid epoxy resin composition whichcomprises the following component (D) and the following components (A)to (C): (A) a liquid epoxy resin, (B) a curing agent, (C) anN,N,N′,N′-tetra-substituted fluorine-containing aromatic diaminecompound, and (D) a carboxylic acid vinyl ether addition product.
 2. Theelectronic part device described in claim 1, wherein the aforementionedN,N,N′,N′-tetra-substituted fluorine-containing aromatic diaminecompound as the component (C) is a compound represented by the followinggeneral formula (1):

(in the formula (1), X is fluorine and/or C_(n)F_(2n+) (n is a positivenumber of from 1 to 10), m is an integer of from 1 to 4, and R¹ to R⁴are monovalent organic groups other than hydrogen, which may be the sameor different from one another).
 3. The electronic part device describedin claim 1, wherein the N,N,N′,N′-tetra-substituted fluorine-containingaromatic diamine compound as the component (C) is a reaction product of2,2′-di(trifluoromethyl)-4,4′-diaminobiphenyl with a mono-epoxy compoundcontaining one epoxy group in one molecule.
 4. The electronic partdevice described in claim 1, wherein the content of theN,N,N′,N′-tetra-substituted fluorine-containing aromatic diaminecompound as the component (C) is set to a range of from 10 to 70% byweight, more preferably from 20 to 40% by weight, based on the entireorganic components of the liquid epoxy resin composition.
 5. Theelectronic part device described in claim 1, wherein the curing agent asthe component (B) is at least one of the fluorine-containing aromaticdiamine represented by the following general formula (2) and aderivative thereof:

(in the formula (2), X is fluorine and/or C_(n)F_(2n+1) (n is a positivenumber of from 1 to 10), m is an integer of from 1 to 4, each of R⁵ toR⁸ is hydrogen or a monovalent organic group, and at least one of R⁵ toR⁸ is hydrogen).
 6. The electronic part device described in claim 5,which comprises a prepolymer prepared by allowing at least one of thefluorine-containing aromatic diamine represented by the aforementionedgeneral formula (2) and a derivative thereof to react with the liquidepoxy resin as the component (A).
 7. The electronic part devicedescribed in claim 3, wherein the mono-epoxy compound containing oneepoxy group in one molecule is at least one compound selected from thegroup consisting of n-butyl glycidyl ether, allyl glycidyl ether,2-ethylhexyl glycidyl ether, styrene oxide, phenyl glycidyl ether,cresyl glycidyl ether, lauryl glycidyl ether, p-sec-butylphenyl glycidylether, nonylphenyl glycidyl ether, glycidyl ether of carbinol, glycidylmethacrylate, vinylcyclohexene monoepoxide and α-pinene oxide.
 8. Theelectronic part device described in claim 1, wherein the carboxylic acidvinyl ether addition product as the component (D) is a carboxylic acidmonovinyl ether addition product represented by the following generalformula (3)R¹⁰-[CO—O—CH(CH₃)—O—R¹¹]_(n)  (3) (in the formula (3), R¹⁰ is an organicgroup of monovalent or more, R¹¹ is an organic group of monovalent ormore, wherein they may be the same or different from each other, and nis a positive integer).
 9. The electronic part device described in claim1, wherein the carboxylic acid vinyl ether addition product as thecomponent (D) is a polyvalent carboxylic acid polyvalent vinyl etheraddition product having a structural unit represented by the followinggeneral formula (4) as the main moiety-[O—CO—R¹²—CO—O—CH(CH₃)—O—R¹³—O—CH(CH₃)]_(n)-  (4) (in the formula (4),R¹² and R¹³ are divalent organic groups, wherein they may be the same ordifferent from each other, and n is a positive integer).
 10. Theelectronic part device described in claim 1, which further comprises aninorganic filler in the liquid epoxy resin composition containing thecomponents (A) to (D).
 11. The electronic part device described in claim10, wherein the inorganic filler is a spherical silica powder having anaverage particle diameter of 10 μm or less.